TC3967
REV.1_04/27/2005
2W Packaged Self-Bias PHEMT GaAs Power FETs
FEATURES * * * * * * * * * 2W Typical Output Power 12.5dB Typical Linear Power Gain at 2.45GHz High Linearity: IP3 = 43 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO 15V Wg = 5 mm 100 % DC Tested Suitable for High Reliability Application Lost Cost Ceramic Package PHOTO ENLARGEMENT
DESCRIPTION The TC3967 is a self-bias Cu-based ceramic packaged device with TC1601N PHEMT GaAs FETs, which is designed to provide the single power supply application. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source, which is suitable for oscillator, power amplifier application in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)
Symbol P1dB GL IP3 PAE IDS BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point VDS = 8 V Linear Power Gain VDS = 8 V Intercept Point of the 3rd-order Intermodulation VDS = 8 V, *PSCL = 20 dBm Power Added Efficiency at 1dB Compression Power Drain-Source Current at VDS = 8 V Drain-Gate Breakdown Voltage at IDGO = 1.2mA Thermal Resistance
MIN 32 TYP 33 12.5 43 35 600 18 8 MAX UNIT dBm dB dBm % mA Volts C/W
15
Note: *PSCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1/1
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